

Part number:
BD722
Manufacturer:
INCHANGE
File Size:
186.73kb
Download:
Description:
Pnp transistor. *DC Current Gain- : hFE= 40@ IC= -0.5A *Collector-Emitter Breakdown Voltage - : V(BR)CEO= -80V(Min) *Complement to type BD721 *Minimu
BD722
INCHANGE
186.73kb
Pnp transistor. *DC Current Gain- : hFE= 40@ IC= -0.5A *Collector-Emitter Breakdown Voltage - : V(BR)CEO= -80V(Min) *Complement to type BD721 *Minimu
📁 Related Datasheet
BD720 - (BD720 - BD726) Silicon Power Transistors
(NXP)
..
..
..
..
..
..
..
.
BD720 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -60V(Min) ·Com.
BD721 - Silicon NPN Power Transistor
(Inchange Semiconductor Company)
isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 80V(Min) ·Compl.
BD722 - (BD720 - BD726) Silicon Power Transistors
(NXP)
..
..
..
..
..
..
..
.
BD723 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BD719/721/723/725
DESCRIPTION ·DC Current Gain-
: hFE= 20(Min)@ IC= 2A ·Complement to Type BD720/722/724/726 ·Minim.
BD723 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BD723
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 100V(Min.
BD724 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -100V(Min) ·Co.
BD724 - (BD720 - BD726) Silicon Power Transistors
(NXP)
..
..
..
..
..
..
..
.
BD725 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
BD725
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= 120V(Min.
BD726 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
BD726
DESCRIPTION ·DC Current Gain-
: hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -120V(M.