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BD725 NPN Transistor

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Description

isc Silicon NPN Power Transistor BD725 .
DC Current Gain- : hFE= 40@ IC= 0. Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min). Complement to type BD726. Minimum.

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Datasheet Specifications

Part number
BD725
Manufacturer
INCHANGE
File Size
203.70 KB
Datasheet
BD725-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for use in audio output and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 120 VCEO Collector-Emitter Voltage 120 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 4 ICM Collector C

BD725 Distributors

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NPN Transistor INCHANGE
INCHANGE BD725-like datasheet