NXP manufacturer logo and representative part image Part number: BD722 Manufacturer: NXP ↗ File Size: 224.37kb Download: 📄 Datasheet Description: (bd720 - bd726) silicon power transistors.
BD720 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -60V(Min) ·Com.
BD721 - Silicon NPN Power Transistor (Inchange Semiconductor Company) isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 80V(Min) ·Compl.
BD722 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistor BD722 DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -80V(Mi.
BD723 - NPN Transistor (INCHANGE) isc Silicon NPN Power Transistor BD719/721/723/725 DESCRIPTION ·DC Current Gain- : hFE= 20(Min)@ IC= 2A ·Complement to Type BD720/722/724/726 ·Minim.
BD723 - NPN Transistor (INCHANGE) isc Silicon NPN Power Transistor BD723 DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 100V(Min.
BD724 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -100V(Min) ·Co.
BD725 - NPN Transistor (INCHANGE) isc Silicon NPN Power Transistor BD725 DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= 0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= 120V(Min.
BD726 - PNP Transistor (INCHANGE) isc Silicon PNP Power Transistor BD726 DESCRIPTION ·DC Current Gain- : hFE= 40@ IC= -0.5A ·Collector-Emitter Breakdown Voltage - : V(BR)CEO= -120V(M.