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BD721 - Silicon NPN Power Transistor

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BD721 Product details

Description

DC Current Gain- : hFE= 40@ IC= 0.5A Collector-Emitter Breakdown Voltage - : V(BR)CEO= 80V(Min) Complement to type BD722 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in audio output and general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 80 VCEO Collector-Emitter Voltage 80 VEBO Emitter-Base Voltage 5 IC Collector Curr

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