BD750B PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistors .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -100V(Min)- BD751B = -130V(Min)- BD751C. High Power Dissipation. Complement to Type.

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Datasheet Specifications

Part number: BD750B
Manufacturer: INCHANGE
File Size: 207.44 KB
Datasheet: BD750B-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD750B -110 VCEV Collector-Emitter Voltage V BD750C -140 BD750B -100 VCEO(SUS) Collector-Emitter Voltage V BD750C -130 VEBO Emitter-Base Voltage -7 V I

BD750B Distributors

📁 Related Datasheet

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BD750B PNP Transistor INCHANGE

INCHANGE BD750B-like datasheet