BD751B Datasheet - INCHANGE

BD751B, NPN Transistor

isc Silicon NPN Power Transistors DESCRIPTION * Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C *Hi

Applications

* Designed for high voltage and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751B 110 VCEV Collector-Emitter Voltage V BD751C 140 BD751B 100 VCEO(SUS) Collector-Emitter Voltage V BD751C 130 VEBO Emitter-Base Voltage 7 V IC C

BD751B-INCHANGE.pdf