BD751B NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C. High Power Dissipation. Complement to Type BD.

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Datasheet Specifications

Part number: BD751B
Manufacturer: INCHANGE
File Size: 203.59 KB
Datasheet: BD751B-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751B 110 VCEV Collector-Emitter Voltage V BD751C 140 BD751B 100 VCEO(SUS) Collector-Emitter Voltage V BD751C 130 VEBO Emitter-Base Voltage 7 V IC C

BD751B Distributors

📁 Related Datasheet

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BD751B NPN Transistor INCHANGE

INCHANGE BD751B-like datasheet