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BD751C, BD751B Datasheet - INCHANGE

BD751C, BD751B, NPN Transistor

isc Silicon NPN Power Transistors DESCRIPTION * Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C *Hi

Applications

* Designed for high voltage and high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751B 110 VCEV Collector-Emitter Voltage V BD751C 140 BD751B 100 VCEO(SUS) Collector-Emitter Voltage V BD751C 130 VEBO Emitter-Base Voltage 7 V IC C

BD751B-INCHANGE.pdf

This datasheet PDF includes multiple part numbers: BD751C, BD751B. Please refer to the document for exact specifications by model.
BD751C Datasheet Preview Page 2

Datasheet Details

Part number:

BD751C, BD751B

Manufacturer:

INCHANGE

File Size:

203.59 KB

Description:

Npn transistor.

Note:

This datasheet PDF includes multiple part numbers: BD751C, BD751B.
Please refer to the document for exact specifications by model.

BD751C Distributors

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BD751B NPN Transistor INCHANGE
INCHANGE BD751C-like datasheet
BD751
BD751A
BD751B
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BD750A