BD751C, BD751B NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min)- BD751B = 130V(Min)- BD751C. High Power Dissipation. Complement to Type BD.

📥 Download Datasheet

BD751C Datasheet Preview — This datasheet PDF includes multiple part numbers: BD751C, BD751B. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: BD751C, BD751B
Manufacturer: INCHANGE
File Size: 203.59 KB
Datasheet: BD751B-INCHANGE.pdf
Description: NPN Transistor
Note: This datasheet PDF includes multiple part numbers: BD751C, BD751B.
Please refer to the document for exact specifications by model.

Applications

* Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751B 110 VCEV Collector-Emitter Voltage V BD751C 140 BD751B 100 VCEO(SUS) Collector-Emitter Voltage V BD751C 130 VEBO Emitter-Base Voltage 7 V IC C

BD751C Distributors

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BD751B NPN Transistor INCHANGE

INCHANGE BD751C-like datasheet