BD751 Silicon NPN Power Transistors

INCHANGE

Description

isc Silicon NPN Power Transistors .
Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BD751 = 120V(Min)- BD751A. High Power Dissipation. Complement to Type BD75.

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Datasheet Specifications

Part number: BD751
Manufacturer: INCHANGE
File Size: 207.63 KB
Datasheet: BD751-INCHANGE.pdf
Description: Silicon NPN Power Transistors

Applications

* Designed for high voltage and high power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BD751 100 VCEV Collector-Emitter Voltage V BD751A 130 BD751 90 VCEO(SUS) Collector-Emitter Voltage V BD751A 120 VEBO Emitter-Base Voltage 7 V IC Col

BD751 Distributors

📁 Related Datasheet

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BD751 Silicon NPN Power Transistors INCHANGE

INCHANGE BD751-like datasheet