BD825 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD825 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD826.

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BD825 Datasheet Preview — Preview of BD825 PDF

Datasheet Specifications

Part number: BD825
Manufacturer: INCHANGE
File Size: 207.20 KB
Datasheet: BD825-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICP

BD825 Distributors

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BD825 NPN Transistor INCHANGE

INCHANGE BD825-like datasheet