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BD829 - NPN Transistor

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Datasheet Details

Part number BD829
Manufacturer INCHANGE
File Size 207.46 KB
Description NPN Transistor
Datasheet download datasheet BD829-INCHANGE.pdf

BD829 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain Low Saturation Voltage Complement to Type BD828 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for driver-stages in hi-fi amplifiers and television circuits.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5

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