BD827 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD827 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD828.

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Datasheet Specifications

Part number: BD827
Manufacturer: INCHANGE
File Size: 207.35 KB
Datasheet: BD827-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.0 A ICP

BD827 Distributors

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BD827 NPN Transistor INCHANGE

INCHANGE BD827-like datasheet