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BD841 NPN Transistor

BD841 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor BD841 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD842.

BD841 Applications

* Designed for use in television circuits and audio applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 1.5 A ICP Collect

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Datasheet Details

Part number
BD841
Manufacturer
INCHANGE
File Size
207.52 KB
Datasheet
BD841-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BD841-like datasheet