BD840 PNP Transistor

INCHANGE

Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD840 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD839.

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Datasheet Specifications

Part number: BD840
Manufacturer: INCHANGE
File Size: 207.91 KB
Datasheet: BD840-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A

BD840 Distributors

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BD840 PNP Transistor INCHANGE

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