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BD842 PNP Transistor

BD842 Description

isc Silicon PNP Power Transistor INCHANGE Semiconductor BD842 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min). High DC Current Gain. Low Saturation Voltage. Complement to Type BD841.

BD842 Applications

* Designed for driver-stages in hi-fi amplifiers and television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A

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Datasheet Details

Part number
BD842
Manufacturer
INCHANGE
File Size
207.36 KB
Datasheet
BD842-INCHANGE.pdf
Description
PNP Transistor

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INCHANGE BD842-like datasheet