BD898 Datasheet - INCHANGE

BD898, PNP Transistor

isc Silicon PNP Darlington Power Transistor BD898 DESCRIPTION *Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) *High DC Current G

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -60 VCEO Collector-Emitter Voltage -60 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-C

BD898-INCHANGE.pdf