BD895

NPN Transistor

INCHANGE

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Part number:

BD895

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INCHANGE

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207.90 KB

Description:

Npn transistor.
isc Silicon NPN Darlington Power Transistor BD895 DESCRIPTION *Collector-Emitter Breakdown Voltage.
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 45V(Min) *High DC Current Gain : hFE= 750(Min) @IC.

✔ BD895 Application

Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

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BD895 NPN Transistor INCHANGE

Datasheet Details

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Description:

✔ BD895 Application

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