BD897A NPN Transistor

INCHANGE

Description

isc Silicon NPN Darlington Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min). High DC Current Gain : hFE= 750(Min) @IC= 4A. Collector Power Dissipation- : P.

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Datasheet Specifications

Part number: BD897A
Manufacturer: INCHANGE
File Size: 208.05 KB
Datasheet: BD897A-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 8 IB Base Current-Conti

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BD897A NPN Transistor INCHANGE

INCHANGE BD897A-like datasheet