BD896 - PNP Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min) *High DC Current Gain : hFE= 750(Min) @IC= -3A *Collector Power Dissipation- : PC= 70W@ TC= 25℃ *8 A Continuous Collector Current *Complement to Type BD895 *Minimum Lot-to-Lot variations for robust device performance
