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BD896 PNP Transistor

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Description

isc Silicon PNP Darlington Power Transistor BD896 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -45V(Min). High DC Current Gain : hFE= 750(Min) @IC= -3A. Collector Power Dissipation- :.

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Datasheet Specifications

Part number
BD896
Manufacturer
INCHANGE
File Size
208.79 KB
Datasheet
BD896-INCHANGE.pdf
Description
PNP Transistor

Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -45 VCEO Collector-Emitter Voltage -45 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-C

BD896 Distributors

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PNP Transistor INCHANGE
INCHANGE BD896-like datasheet