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BD900 - PNP Transistor

BD900 Description

isc Silicon PNP Darlington Power Transistor BD900 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min). High DC Current Gain : hFE= 750(Min) @IC= -3A. Collector Power Dissipation- :.

BD900 Applications

* Designed for use as complementary AF push-pull output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -80 VCEO Collector-Emitter Voltage -80 VEBO Emitter-Base Voltage -5 IC Collector Current-Continuous -8 IB Base Current-C

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Datasheet Details

Part number
BD900
Manufacturer
INCHANGE
File Size
208.42 KB
Datasheet
BD900-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE BD900-like datasheet