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BD900 Datasheet - INCHANGE

BD900 PNP Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) *High DC Current Gain : hFE= 750(Min) @IC= -3A *Collector Power Dissipation- : PC= 70W@ TC= 25℃ *8 A Continuous Collector Current *Complement to Type BD899 *Minimum Lot-to-Lot variations for robust device performance.

BD900-INCHANGE.pdf

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Datasheet Details

Part number:

BD900

Manufacturer:

INCHANGE

File Size:

208.42 KB

Description:

Pnp transistor.

BD900 Distributor

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BD900 BD900 PNP Transistor INCHANGE