Datasheet Details
- Part number
- BD900
- Manufacturer
- INCHANGE
- File Size
- 208.42 KB
- Datasheet
- BD900-INCHANGE.pdf
- Description
- PNP Transistor
BD900 Description
isc Silicon PNP Darlington Power Transistor BD900 .
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min).
High DC Current Gain
: hFE= 750(Min) @IC= -3A.
Collector Power Dissipation-
:.
BD900 Applications
* Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VCBO
Collector-Base Voltage
-80
VCEO
Collector-Emitter Voltage
-80
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-8
IB
Base Current-C
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