BDT62 Silicon PNP Darlington Power Transistors

INCHANGE

Description

isc Silicon PNP Darlington Power Transistors BDT62/A/B/C .
DC Current Gain -hFE = 1000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min.

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Datasheet Specifications

Part number: BDT62
Manufacturer: INCHANGE
File Size: 216.74 KB
Datasheet: BDT62-INCHANGE.pdf
Description: Silicon PNP Darlington Power Transistors

Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT62 -60 VCBO Collector-Base Voltage BDT62A BDT62B -80 -100 BDT62C -120 BDT62 -60 VCEO Collector-Emitter V

BDT62 Distributors

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BDT62 Silicon PNP Darlington Power Transistors INCHANGE

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