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BDT62B, BDT62 Silicon PNP Darlington Power Transistors

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Description

isc Silicon PNP Darlington Power Transistors BDT62/A/B/C .
DC Current Gain -hFE = 1000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min)- BDT62; -80V(Min)- BDT62A; -100V(Min.

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This datasheet PDF includes multiple part numbers: BDT62B, BDT62. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
BDT62B, BDT62
Manufacturer
INCHANGE
File Size
216.74 KB
Datasheet
BDT62-INCHANGE.pdf
Description
Silicon PNP Darlington Power Transistors
Note
This datasheet PDF includes multiple part numbers: BDT62B, BDT62.
Please refer to the document for exact specifications by model.

Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDT62 -60 VCBO Collector-Base Voltage BDT62A BDT62B -80 -100 BDT62C -120 BDT62 -60 VCEO Collector-Emitter V

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