BDT62F PNP Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistors BDT62F .
DC Current Gain -hFE = 1000(Min)@ IC= -3A. Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -60V(Min). Complement to Type BDT63F.

📥 Download Datasheet

BDT62F Datasheet Preview — Preview of BDT62F PDF

Datasheet Specifications

Part number: BDT62F
Manufacturer: INCHANGE
File Size: 213.81 KB
Datasheet: BDT62F-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use in audio amplifier output stages , general purpose amplifier and high speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V

BDT62F Distributors

📁 Related Datasheet

BDT60 BDT60A BDT60B BDT60C BDT61 BDT61A

📌 All Tags

BDT62F PNP Transistor INCHANGE

INCHANGE BDT62F-like datasheet