BDX18
INCHANGE
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Pnp transistor.
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BDX10 - Bipolar NPN Device
(Seme LAB)
..
BDX10
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15.
BDX11 - Bipolar NPN Device
(Seme LAB)
BDX11
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDX11 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BDX11
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 140V (Min) ·High Current.
BDX12 - Bipolar NPN Device
(Seme LAB)
BDX12
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN .
BDX12 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BDX12
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V (Min) ·Excellent Sa.
BDX13 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BDX13
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=15-60@IC = 8A ·Collect.
BDX14 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistor
BDX14
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(Mi.
BDX14A - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
BDX14A
DESCRIPTION ·Continuous Collector Current-IC= -4A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -55V(M.
BDX14A - PNP Epitaxial Silicon Bipolar Transistor
(TT)
PNP Epitaxial Silicon Bipolar Transistor
BDX14A
Hermetic TO-66 Metal Package Ideal For General Purpose Low Frequency Switching Applications High Relia.
BDX14AA - PNP Silicon Transistor
(Seme LAB)
BDX14AA
MECHANICAL DATA Dimensions in mm
PNP SILICON TRANSISTOR, EPITAXIAL BASE
6.35 (0.250) 8.64 (0.340)
3.68 (0.145) rad. max.
3.61 (0.142) 3.86.
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