BU506DF NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor BU506DF .
High Voltage. High Switching Speed. Built-in Integrated Efficiency Diode. Minimum Lot-to-Lot variations for robust device performance.

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Datasheet Specifications

Part number: BU506DF
Manufacturer: INCHANGE
File Size: 210.00 KB
Datasheet: BU506DF-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for use in horizontal deflection circuits of color TV receivers and in line-operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage-VBE=0 1350 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base V

BU506DF Distributors

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BU506DF NPN Transistor INCHANGE

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