BU800 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Breakdown Voltage- : VCBO= 1500V (Min). Collector-Emitter Saturation Voltage- : VCE(sat)= 5. Built-in Damper Diod.

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Datasheet Specifications

Part number: BU800
Manufacturer: INCHANGE
File Size: 202.79 KB
Datasheet: BU800-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 5 A ICP

BU800 Distributors

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BU800 NPN Transistor INCHANGE

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