BU807 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Darlington Power Transistor .
High Voltage: VCBO= 330V(Min). Low Saturation Voltage- : VCE(sat)= 1. Minimum Lot-to-Lot variations for robust device per.

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Datasheet Specifications

Part number: BU807
Manufacturer: Inchange Semiconductor
File Size: 196.42 KB
Datasheet: BU807-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for use in horizontal deflection circuits in TV’s and CRT’s. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 330 V VCEV Collector-Emitter Voltage 330 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC

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BU807 Silicon NPN Power Transistor Inchange Semiconductor

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