BU801 Datasheet, darlington equivalent, ST Microelectronics

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isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 5.0V(Max.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU806/D NPN Darlington Power Transistor This Darlington transistor is a high voltage, .

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isc Silicon NPN Darlington Power Transistor BU806F DESCRIPTION ·High voltage ·High switching speed ·Low saturation voltage ·100% avalanche tested ·M.

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimu.

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® BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON s s s s s s s STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH .

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® BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN MONOLITHIC DARLINGTON WITH I.