BU810 Silicon NPN Darlington Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor www.DataSheet4U.com isc Product Specification isc Silicon NPN Darlington Power Transistor BU810 .
Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min). High Switching Speed APPLICATIONS. Designed for use in high frequency and ef.

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Datasheet Specifications

Part number: BU810
Manufacturer: Inchange Semiconductor
File Size: 160.36 KB
Datasheet: BU810_InchangeSemiconductor.pdf
Description: Silicon NPN Darlington Power Transistor

Applications

* Designed for use in high frequency and efficency converters, switching regulators and motor control. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Curren

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