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isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
BUK444-600A/B
DESCRIPTION ·Drain Source Voltage-
: VDSS=600V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Switched Mode Power Supplies (SMPS), motor control,welding, And in general purpose switching resistance application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS
Gate-Source Voltage
Drain
BUK444-600A
ID
Current-continuous
@ TC=25℃
BUK444-600B
VALUE UNIT
600
V
±30
V
1.6
A 1.5
Ptot
Total Dissipation@TC=25℃
25
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
150
℃
isc website:www.iscsemi.