BUK444-500B Datasheet, Transistor, Philips

PDF File Details

Part number:

BUK444-500B

Manufacturer:

Philips

File Size:

1.29MB

Download:

📄 Datasheet

Description:

Power mos transistor.

Datasheet Preview: BUK444-500B 📥 Download PDF (1.29MB)
Page 2 of BUK444-500B Page 3 of BUK444-500B

TAGS

BUK444-500B
Power
MOS
Transistor
Philips

📁 Related Datasheet

BUK444-200A - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK444-200A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.

BUK444-200B - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK444-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK444-200B - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=200V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.

BUK444-220A - N-Channel MOSFET Transistor (Inchange Semiconductor)
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification BUK444-200A DESCRIPTION ·5.3A, 200V • SOA is Power Dissipation Limi.

BUK444-600A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK444-600A/B DESCRIPTION ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Mini.

BUK444-600B - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor BUK444-600A/B DESCRIPTION ·Drain Source Voltage- : VDSS=600V(Min) ·Fast Switching Speed ·Mini.

BUK444-60H - PowerMOS transistor (NXP)
Philips Semiconductors Product specification PowerMOS transistor BUK444-60H GENERAL DESCRIPTION N-channel enhancement mode field-effect power tran.

BUK444-800A - PowerMOS transistor (NXP)
Philips Semiconductors Product Specification PowerMOS transistor BUK444-800A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power t.

BUK444-800A - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Source Voltage- : VDSS=800V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust d.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts