BUK444-200A Datasheet, Transistor, NXP

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BUK444-200A

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NXP ↗

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📄 Datasheet

Description:

Powermos transistor. N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched

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BUK444-200A Application

  • Applications QUICK REFERENCE DATA SYMBOL VDS ID Ptot RDS(ON) PARAMETER BUK444 Drain-source voltage Drain current (DC) Total power dissipation Drai

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BUK444-200A
PowerMOS
transistor
NXP

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