BUV12 Datasheet - INCHANGE

BUV12, NPN Transistor

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 0. High Switching Speed. High DC Current Gain- : hFE= 20(Min.

Applications

* Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Colle

BUV12-INCHANGE.pdf