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BUV12 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
Low Collector Saturation Voltage- : VCE(sat)= 0. High Switching Speed. High DC Current Gain- : hFE= 20(Min.

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Datasheet Specifications

Part number
BUV12
Manufacturer
INCHANGE
File Size
207.18 KB
Datasheet
BUV12-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high current, high speed, high power applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A ICM Colle

BUV12 Distributors

📁 Related Datasheet

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NPN Transistor INCHANGE
INCHANGE BUV12-like datasheet