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BUV70 NPN Transistor

BUV70 Description

isc Silicon NPN Power Transistor BUV70 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 600V (Min). High Power Dissipation. Fast Switching Speed. Minimum Lot-to-Lot variati.

BUV70 Applications

* Designed for motor controls, switching mode power supplies applications. Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCES Collector-Emitter Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Cu

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Datasheet Details

Part number
BUV70
Manufacturer
INCHANGE
File Size
214.69 KB
Datasheet
BUV70-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE BUV70-like datasheet