D726 Silicon NPN Power Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPNPower Transistor isc Product Specification 2SD726 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO = 80V(Min). High Power Dissipation. Complement to Type 2SB690 APPLICATIONS. Designed.

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Datasheet Specifications

Part number: D726
Manufacturer: INCHANGE
File Size: 215.45 KB
Datasheet: D726-INCHANGE.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) i. cnSYMBOL PARAMETER VALUE UNIT . iscsemVCBO Collector-Base Voltage 100 V wwwVCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 4A ICM Collector Cu

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D726 Silicon NPN Power Transistor INCHANGE

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