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DMN80H2D0SCTI N-Channel MOSFET

DMN80H2D0SCTI Description

isc N-Channel MOSFET Transistor DMN80H2D0SCTI .
Designed for use in switch mode power supplies and general purpose applications.

DMN80H2D0SCTI Features

* Drain Current
* ID= 7A@ TC=25℃
* Drain Source Voltage- : VDSS= 800V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 2.0Ω(Max)
* 100% avalanche tested

DMN80H2D0SCTI Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 800 V ±30 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 28 A PD Total Dissipation @TC=25℃ 41 W TJ Max. Operating Junction Temperature

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Datasheet Details

Part number
DMN80H2D0SCTI
Manufacturer
INCHANGE
File Size
247.07 KB
Datasheet
DMN80H2D0SCTI-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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