* Low RDS(ON)
* Ensures On-State Losses are Minimized
* Small Form Factor Thermally Efficient Package Enables Higher Density End Products
* Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product
* ESD Protected Gate
* Totally Lead-Free & Fully R
DMN1004UFV Datasheet (369.53 KB)
DMN1004UFV
369.53 KB
12v n-channel mosfet.
DMN1004UFV
12V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX)
Product Summary
BVDSS 12V
RDS(ON) Max
3.8mΩ @ VGS = 4.5V 5.1mΩ @ VGS = 2.5.
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