DMN10H170SFGQ Datasheet, Mosfet, DIODES

DMN10H170SFGQ Features

• Mosfet BVDSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.7A Description and Applications This MOSFET is designed to meet the stringent requirements of au

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DMN10H170SFGQ

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📄 Datasheet

Description:

N-channel mosfet. and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101,

DMN10H170SFGQ Application

• Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP

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DMN10H170SFGQ

DIODES

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