* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: TSOT26
* Case Material: Molded Plastic, “Green” Molding Compou
DMN10H170SVT Datasheet (468.28 KB)
DMN10H170SVT
468.28 KB
N-channel mosfet.
ADVANCED INNEFWORPRMOADTIUOCNT
DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) max
160mΩ @ VGS = 10V 200mΩ @ .
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ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 100V
RDS(ON) Max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID Max TA = +25°C
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Descriptio.
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Product Summary
V(BR)DSS 100V
RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
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Product Summary
V(BR)DSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.7A
Description
This MOSFET ha.
DMN10H170SFGQ - N-CHANNEL MOSFET
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N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
Features
BVDSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V.
DMN10H170SK3 - N-Channel MOSFET
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NEW PRODUCT
DMN10H170SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) Max
140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V
ID.
DMN10H100SK3 - N-Channel MOSFET
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FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
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DMN10H100SK3 - N-Channel MOSFET
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BVDSS 100V
RDS(ON) max
80mΩ @ VGS = 10V 100mΩ @ VGS = 4..
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A D V A N C E E DN IENWF OPRR OMDA TUICOTN
Product Summary
V(BR)DSS 100V
RDS(ON) max
110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.6A
3.
