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DMN10H170SVT N-Channel MOSFET

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Description

ADVANCED INNEFWORPRMOADTIUOCNT DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.

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Features

* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. β€œGreen” Device (Note 3) Mechanical Data
* Case: TSOT26
* Case Material: Molded Plastic, β€œGreen” Molding Compou

Applications

* Applications
* Power Management Functions
* Battery Operated Systems and Solid-State Relays

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