DMN10H120SE N-Channel MOSFET

Diodes

Description

A D V A N C E E DN IENWF OPRR OMDA TUICOTN Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.6A 3.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.

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Datasheet Specifications

Part number: DMN10H120SE
Manufacturer: DIODES ↗
File Size: 417.52 KB
Datasheet: DMN10H120SE-Diodes.pdf
Description: N-Channel MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: SOT223
* Case Material: Molded Plastic,

Applications

* Applications
* DC-DC Converters

DMN10H120SE Distributors

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DMN10H120SE N-Channel MOSFET Diodes

Diodes DMN10H120SE-like datasheet