Datasheet Details
- Part number
- DMN10H120SE
- Manufacturer
- DIODES ↗
- File Size
- 417.52 KB
- Datasheet
- DMN10H120SE-Diodes.pdf
- Description
- N-Channel MOSFET
DMN10H120SE Description
A D V A N C E E DN IENWF OPRR OMDA TUICOTN Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.6A 3.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.
DMN10H120SE Features
* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
* Case: SOT223
* Case Material: Molded Plastic,
DMN10H120SE Applications
* Applications
* DC-DC Converters
📁 Related Datasheet
📌 All Tags