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DMN10H120SE Datasheet - Diodes

DMN10H120SE, N-Channel MOSFET

A D V A N C E E DN IENWF OPRR OMDA TUICOTN Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.6A 3.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal.
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DMN10H120SE-Diodes.pdf

Preview of DMN10H120SE PDF

Datasheet Details

Part number:

DMN10H120SE

Manufacturer:

DIODES ↗

File Size:

417.52 KB

Description:

N-Channel MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data
* Case: SOT223
* Case Material: Molded Plastic,

Applications

* Applications
* DC-DC Converters

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