* Low On-Resistance
* Low Input Capacitance
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the
DMN10H170SK3 Datasheet (394.42 KB)
DMN10H170SK3
394.42 KB
N-channel mosfet.
NEW PRODUCT
DMN10H170SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) Max
140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V
ID.
📁 Related Datasheet
DMN10H170SFDE - N-Channel MOSFET
(Diodes)
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
Product Summary
V(BR)DSS 100V
RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.6A
.
DMN10H170SFG - N-Channel MOSFET
(Diodes)
NEW PRODUCT
Product Summary
V(BR)DSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.7A
Description
This MOSFET ha.
DMN10H170SFGQ - N-CHANNEL MOSFET
(DIODES)
DMN10H170SFGQ
N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
Features
BVDSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V.
DMN10H170SVT - N-Channel MOSFET
(Diodes)
ADVANCED INNEFWORPRMOADTIUOCNT
DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) max
160mΩ @ VGS = 10V 200mΩ @ .
DMN10H170SVTQ - 100V N-CHANNEL MOSFET
(Diodes)
ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 100V
RDS(ON) Max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID Max TA = +25°C
2.6A
2.3A
Descriptio.
DMN10H100SK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
.
DMN10H100SK3 - N-Channel MOSFET
(Diodes)
NEW PNREOWDPURCOTDUCT
DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) max
80mΩ @ VGS = 10V 100mΩ @ VGS = 4..
DMN10H120SE - N-Channel MOSFET
(Diodes)
A D V A N C E E DN IENWF OPRR OMDA TUICOTN
Product Summary
V(BR)DSS 100V
RDS(ON) max
110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.6A
3.
