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DMN10H170SFDE N-Channel MOSFET

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Description

ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.6A .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal.

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Features

* 0.6mm Profile

Applications

* Applications
* Power Management Functions
* Battery Operated Systems and Solid-State Relays

DMN10H170SFDE Distributors

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