Datasheet Details
- Part number
- DMN10H170SFDE
- Manufacturer
- DIODES ↗
- File Size
- 380.23 KB
- Datasheet
- DMN10H170SFDE-Diodes.pdf
- Description
- N-Channel MOSFET
DMN10H170SFDE Description
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION Product Summary V(BR)DSS 100V RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.6A .
This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal.
DMN10H170SFDE Features
* 0.6mm Profile
DMN10H170SFDE Applications
* Applications
* Power Management Functions
* Battery Operated Systems and Solid-State Relays
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