DMN10H170SVTQ 100V N-CHANNEL MOSFET

Diodes

Description

ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID Max TA = +25°C 2.6A 2.3A Descriptio.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMN10H170SVTQ
Manufacturer: DIODES ↗
File Size: 481.98 KB
Datasheet: DMN10H170SVTQ-Diodes.pdf
Description: 100V N-CHANNEL MOSFET

Features

* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability
* PPAP Capable (Note 4) Mechani

Applications

* Applications
* Power Management Functions
* Battery Operated Systems and Solid-State Relays

DMN10H170SVTQ Distributors

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DMN10H170SVTQ 100V N-CHANNEL MOSFET Diodes

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