Datasheet Details
- Part number
- DMN10H170SVTQ
- Manufacturer
- DIODES ↗
- File Size
- 481.98 KB
- Datasheet
- DMN10H170SVTQ-Diodes.pdf
- Description
- 100V N-CHANNEL MOSFET
DMN10H170SVTQ Description
ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 100V RDS(ON) Max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V ID Max TA = +25°C 2.6A 2.3A Descriptio.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for.
DMN10H170SVTQ Features
* Low Gate Threshold Voltage
* Low Input Capacitance
* Fast Switching Speed
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* Qualified to AEC-Q101 Standards for High Reliability
* PPAP Capable (Note 4)
Mechani
DMN10H170SVTQ Applications
* Applications
* Power Management Functions
* Battery Operated Systems and Solid-State Relays
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