Datasheet Details
- Part number
- DMN10H120SFG
- Manufacturer
- DIODES ↗
- File Size
- 207.93 KB
- Datasheet
- DMN10H120SFG-Diodes.pdf
- Description
- N-Channel MOSFET
DMN10H120SFG Description
ADVANCE INFORMATION Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.8 A 3.6 A .
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high effici.
DMN10H120SFG Features
* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher
density end products
* Occupies just 33% of the board area occupied by SO-8 enabling
smaller end product
* Totally Lead-Free & Fully RoHS Compl
DMN10H120SFG Applications
* Applications
* Power Management Functions
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