DMN10H120SFG Datasheet - Diodes

DMN10H120SFG, N-Channel MOSFET

ADVANCE INFORMATION Product Summary V(BR)DSS 100V RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V ID max TA = +25°C 3.8 A 3.6 A .
This MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high effici.

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Datasheet Details

Part number:

DMN10H120SFG

Manufacturer:

DIODES ↗

File Size:

207.93 KB

Description:

N-Channel MOSFET

Features

* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
* Totally Lead-Free & Fully RoHS Compl

Applications

* Applications
* Power Management Functions

DMN10H120SFG Distributors

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DMN10H120SFG N-Channel MOSFET Diodes

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