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DMN10H170SFG N-Channel MOSFET

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Description

NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.7A .
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high.

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Features

* 100% Unclamped Inductive Switch (UIS) test in production
* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher density end products
* Occupies just 33% of the board area occupied by SO-8 enabling smaller end pro

Applications

* Applications
* Backlighting
* Power Management Functions

DMN10H170SFG Distributors

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