Datasheet Details
- Part number
- DMN10H170SFG
- Manufacturer
- DIODES ↗
- File Size
- 298.24 KB
- Datasheet
- DMN10H170SFG-Diodes.pdf
- Description
- N-Channel MOSFET
DMN10H170SFG Description
NEW PRODUCT Product Summary V(BR)DSS 100V RDS(ON) max 122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V ID max TA = +25°C 2.9A 2.7A .
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high.
DMN10H170SFG Features
* 100% Unclamped Inductive Switch (UIS) test in production
* Low RDS(ON)
* ensures on state losses are minimized
* Small form factor thermally efficient package enables higher
density end products
* Occupies just 33% of the board area occupied by SO-8 enabling
smaller end pro
DMN10H170SFG Applications
* Applications
* Backlighting
* Power Management Functions
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