DMN10H170SFG
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N-channel mosfet. This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making i
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DMN10H170SFDE - N-Channel MOSFET
(Diodes)
ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
Product Summary
V(BR)DSS 100V
RDS(ON) max 160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID max TA = +25°C
2.9A
2.6A
.
DMN10H170SFGQ - N-CHANNEL MOSFET
(DIODES)
DMN10H170SFGQ
N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
Features
BVDSS 100V
RDS(ON) max
122mΩ @ VGS = 10V 133mΩ @ VGS = 4.5V.
DMN10H170SK3 - N-Channel MOSFET
(Diodes)
NEW PRODUCT
DMN10H170SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) Max
140mΩ @ VGS = 10V 160mΩ @ VGS = 4.5V
ID.
DMN10H170SVT - N-Channel MOSFET
(Diodes)
ADVANCED INNEFWORPRMOADTIUOCNT
DMN10H170SVT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 100V
RDS(ON) max
160mΩ @ VGS = 10V 200mΩ @ .
DMN10H170SVTQ - 100V N-CHANNEL MOSFET
(Diodes)
ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 100V
RDS(ON) Max
160mΩ @ VGS = 10V 200mΩ @ VGS = 4.5V
ID Max TA = +25°C
2.6A
2.3A
Descriptio.
DMN10H100SK3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 18A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 100V(Min) ·Static Drain-Source On-Resistance
.
DMN10H100SK3 - N-Channel MOSFET
(Diodes)
NEW PNREOWDPURCOTDUCT
DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) max
80mΩ @ VGS = 10V 100mΩ @ VGS = 4..
DMN10H120SE - N-Channel MOSFET
(Diodes)
A D V A N C E E DN IENWF OPRR OMDA TUICOTN
Product Summary
V(BR)DSS 100V
RDS(ON) max
110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.6A
3.
DMN10H120SFG - N-Channel MOSFET
(Diodes)
ADVANCE INFORMATION
Product Summary
V(BR)DSS 100V
RDS(ON) max 110mΩ @ VGS = 10V 122mΩ @ VGS = 6.0V
ID max TA = +25°C
3.8 A
3.6 A
Description
This.
DMN10H099SFG - N-Channel MOSFET
(Diodes)
ADVANCE INFORMATION
DMN10H099SFG
100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary
V(BR)DSS 100V
RDS(ON) max 80mΩ @ VGS = 10V 99mΩ @.