DMN1017UCP3 N-CHANNEL MOSFET

DIODES

Description

Product Summary (Typ.@ VGS = 3.3V, TA = +25°C) VDSS 12V RDS(ON) 14.1mΩ Qg 10.5nC Qgd 4.1nC ID 7.5A .
This new generation MOSFET is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer.

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Datasheet Specifications

Part number: DMN1017UCP3
Manufacturer: DIODES ↗
File Size: 573.92 KB
Datasheet: DMN1017UCP3-DIODES.pdf
Description: N-CHANNEL MOSFET

Features

* TR-MOS Technology with the Lowest RDS(ON): RDS(ON) = 14.1mΩ to Minimize On-State Losses
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.29mm for Low Profile
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)
* For a

Applications

* DC-DC Converters
* Battery Management

DMN1017UCP3 Distributors

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DMN1017UCP3 N-CHANNEL MOSFET DIODES

DIODES DMN1017UCP3-like datasheet