DMN1029UFDB N-CHANNEL ENHANCEMENT MODE MOSFET

Diodes

Description

DMN1029UFDB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) Max 29mΩ @ VGS = 4.5V 34mΩ @ VGS = 2.5V 44mΩ @ VGS = 1.8V 65mΩ @ VG.
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-effi.

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Datasheet Specifications

Part number: DMN1029UFDB
Manufacturer: DIODES ↗
File Size: 528.77 KB
Datasheet: DMN1029UFDB-Diodes.pdf
Description: N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* Low On-Resistance
* Low Input Capacitance
* Low Profile, 0.6mm Max Height
* Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* Applications
* Load switches
* Power-management functions

DMN1029UFDB Distributors

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DMN1029UFDB N-CHANNEL ENHANCEMENT MODE MOSFET Diodes

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