DMN1032UCB4 N-CHANNEL MOSFET

Diodes

Description

ADVANCED INFORMATION PART OBSOLETE - CONTACT US DMN1032UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary VDSS 12V RDS(ON) 18mΩ Qg 3.2nC Q.
This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power.

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Datasheet Specifications

Part number: DMN1032UCB4
Manufacturer: DIODES ↗
File Size: 533.91 KB
Datasheet: DMN1032UCB4-Diodes.pdf
Description: N-CHANNEL MOSFET

Features

* LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching
* VGS(th) = 0.8V Typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* Totally Lead-Free & Fully R

Applications

* DC-DC converters
* Battery management

DMN1032UCB4 Distributors

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DMN1032UCB4 N-CHANNEL MOSFET Diodes

Diodes DMN1032UCB4-like datasheet