DMN1032UCB4 Datasheet - Diodes

DMN1032UCB4 N-CHANNEL MOSFET

This 2nd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON) per footprint area. App.

DMN1032UCB4 Features

* LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching

* VGS(th) = 0.8V Typ. for a Low Turn-On Potential

* CSP with Footprint 1.0mm × 1.0mm

* Height = 0.62mm for Low Profile

* Totally Lead-Free & Fully R

DMN1032UCB4-Diodes.pdf