* LD-MOS Technology with the Lowest Figure of Merit: RDS(ON) = 18mΩ to Minimize On-State Losses Qg = 3.2nC for Ultra-Fast Switching
* VGS(th) = 0.8V Typ. for a Low Turn-On Potential
* CSP with Footprint 1.0mm × 1.0mm
* Height = 0.62mm for Low Profile
* Totally Lead-Free & Fully R
DMN1032UCB4 Datasheet (533.91 KB)
DMN1032UCB4
533.91 KB
N-channel mosfet.
ADVANCED INFORMATION
PART OBSOLETE - CONTACT US
DMN1032UCB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
VDSS 12V
RDS(ON) 18mΩ
Qg 3.2nC
Q.
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