DMN1016UCB6 N-CHANNEL MOSFET

Diodes

Description

DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 12V RDS(ON) 20mΩ @ VGS = 4.5V 23mΩ @ VGS = 2.5V ID TA = +25°C 6.6A 6.1A Fe.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for.

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Datasheet Specifications

Part number: DMN1016UCB6
Manufacturer: DIODES ↗
File Size: 589.61 KB
Datasheet: DMN1016UCB6-Diodes.pdf
Description: N-CHANNEL MOSFET

Features

* Low QG & QGD
* Small Footprint
* Low Profile 0.62mm Height
* Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2)
* Halogen and Antimony Free. “Green” Device (Note 3)

Applications

* Applications
* Battery Management
* Load Switch
* Battery Protection Mechanical Data
* Case: U-WLB1510-6
* Terminal Connections: See Diagram Below
* Terminals: Finished
* SnAgCu Ball
* Weight: 0.0018 grams (Approximate) U-WLB1510-6 Top View Ordering Informati

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DMN1016UCB6 N-CHANNEL MOSFET Diodes

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