FCP067N65S3 Datasheet - INCHANGE

FCP067N65S3, N-Channel MOSFET

isc N-Channel MOSFET Transistor *

Features

* With TO-220 packaging
* High speed switching
* Very high commutation ruggedness
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operationz

Applications

* PFC stages
* UPS
* Power supply
* Switching applications INCHANGE Semiconductor FCP067N65S3
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single

FCP067N65S3-INCHANGE.pdf