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FJD3076 NPN Transistor

FJD3076 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor FJD3076 .
Low collector saturation voltage. High current gain characteristics. Fast-switching speed. 100% tested. Minimum Lot-to-Lot variat.

FJD3076 Applications

* Power amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A PC Collector Power Dissipation (Ta=25℃) 1 W P

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Datasheet Details

Part number
FJD3076
Manufacturer
INCHANGE
File Size
200.89 KB
Datasheet
FJD3076-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE FJD3076-like datasheet